• DocumentCode
    2229153
  • Title

    The influence of oxide materials on the I-V characterictics of MOSFET´s based on carbon nanotubes

  • Author

    Abramov, I.I. ; Volkov, A.E.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    826
  • Lastpage
    827
  • Abstract
    The influence of oxide materials was investigated on the current-voltage characteristics of MOSFET´s based on carbon nanotubes with a channel length of 10 nm using a simplified model. It is shown that the best characteristics would have a transistor in which HfO2 is used as a dielectric.
  • Keywords
    MOSFET; carbon nanotubes; C-HfO2; I-V characterictics; MOSFET; carbon nanotubes; current-voltage characteristics; dielectric material; oxide materials; size 10 nm; Aluminum oxide; Carbon nanotubes; Hafnium compounds; MOSFET circuits; Materials; Scattering; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2229153