DocumentCode :
2229168
Title :
Isolated quantum dots in micropillars: an efficient single-mode solid-state photon source
Author :
Gerard, J.M. ; Robert, I. ; Moreau, E. ; Abram, I.
Author_Institution :
DRFMC/SP2M/PSC, CEA-Grenoble, Grenoble, France
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
234
Abstract :
Summary form only given. The development of efficient solid-state single-photon sources (S4P) has recently become an important challenge in view of their potential application to secure telecommunication systems based on quantum key distribution. Such a device would be able to emit light pulses containing one and only one photon in a deterministic way. Its operation relies on the combination of two functionalities: (1) single photon generation, obtained through the implementation of a single emitter as active medium, and (2) efficient photon collection. We present the first single-mode S4P, which is based on a single InAs QD in a semiconductor micropillar.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; microcavities; photon antibunching; semiconductor quantum dots; spontaneous emission; 3D microcavity; GaAs-AlAs; Purcell effect; efficient photon collection; efficient single-mode solid-state photon source; electron-hole pairs; elliptical cross-section; isolated quantum dots; photon correlation; radiative cascade; resonant cavity mode; semiconductor micropillar; single photon generation; single-mode micropillars; spontaneous emission rate; strong Coulomb interaction; strong antibunching; trapped carriers; Aluminum compounds; Gallium compounds; Quantum dots; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
Type :
conf
DOI :
10.1109/QELS.2002.1031358
Filename :
1031358
Link To Document :
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