• DocumentCode
    2229183
  • Title

    Simulation of single-electron devices based on silicon and molecules

  • Author

    Abramov, I.I. ; Baranoff, A.L. ; Shcherbakova, I.Y.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    828
  • Lastpage
    829
  • Abstract
    Universality of the developed simulation approach of single-electron devices is shown. Good agreement with experimental data is achieved in this regard for different cases.
  • Keywords
    elemental semiconductors; molecular electronics; silicon; single electron devices; Si; molecules; silicon; single-electron devices; Mathematical model; Metals; Nanoelectronics; Quantization; Semiconductor device modeling; Simulation; Single electron transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2229183