• DocumentCode
    2229219
  • Title

    Determination of thermal parameters of semiconductors by photoacoustic phase angle technique

  • Author

    Negm, S. ; Talaat, Hossam

  • Author_Institution
    Fac. of Eng., Zagazig Univ.
  • fYear
    1993
  • fDate
    31 Oct-3 Nov 1993
  • Firstpage
    819
  • Abstract
    Photoacoustic (PA) technique in the gas microphone configuration has been employed to determine the thermal properties of GaAs samples using the phase angle measurements in the saturation region. The doped samples are either n-type (6.9×1017-5.6×1018 ) or p-type (2.08×1017-2.1×1020). The values of the thermal diffusivity (α) are found to change with the dopant concentration and type
  • Keywords
    III-V semiconductors; gallium arsenide; photoacoustic effect; thermal diffusivity; thermal variables measurement; GaAs; dopant concentration; gas microphone configuration; n-type; p-type; photoacoustic phase angle measurement; saturation; semiconductors; thermal diffusivity; thermal parameters; Absorption; Gallium arsenide; Goniometers; Microphones; Phase measurement; Semiconductor materials; Solids; Spectroscopy; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1993. Proceedings., IEEE 1993
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    0-7803-2012-3
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1993.339497
  • Filename
    339497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2229219