Title :
Surface-activating-bonding-based low-resistance Si/III-V junctions
Author :
Liang, Justin ; Nishida, Shuichi ; Morimoto, Masayuki ; Shigekawa, Naoteru
Author_Institution :
Dept. of Electr. Eng., Osaka City Univ., Osaka, Japan
Abstract :
The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface-activated-bonding (SAB), were investigated by measuring their current-voltage (I-V) characteristics. The I-V characteristics of p+-GaAs/n++-Si, p+-GaAs/n+-Si, p+-Si/n+-Si, p++-Si/n+-InGaP, and p+-Si/n+-InGaP junctions showed ohmic-like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; impurity states; indium compounds; p-n heterojunctions; semiconductor doping; silicon; solar cells; GaAs-Si; SAB; Si-InGaP; Si-Si; current-voltage characteristics; doping concentrations; electrical loss; electrical properties; impurity concentration; interface resistance; low-resistance Si-III-V junctions; ohmic-like properties; pn junctions; semiconductor materials; surface activated bonding; surface-activating-bonding; tandem solar cells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.1553
