Title :
Prospects of designing radiation-hard memory devices, made by OJSC “Integral”
Author :
Belous, A.I. ; Lozitsky, E.G. ; Turtsevich, A.S. ; Shvedau, S.V. ; Usov, G.I.
Author_Institution :
OJSC Integral, Minsk, Belarus
Abstract :
The characteristics are indicated of radiation-hard memory devices, made by OJSC “Integral” with consideration of the status and prospects of the news designs of the memory microcircuits.
Keywords :
EPROM; SRAM chips; EEPROM; OJSC integral; SRAM; microcircuits; radiation-hard memory devices; Assembly; EPROM; Ferroelectric films; Nonvolatile memory; Random access memory; Silicon; Silicon on insulator technology;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
