• DocumentCode
    2229627
  • Title

    Prospects of designing radiation-hard memory devices, made by OJSC “Integral”

  • Author

    Belous, A.I. ; Lozitsky, E.G. ; Turtsevich, A.S. ; Shvedau, S.V. ; Usov, G.I.

  • Author_Institution
    OJSC Integral, Minsk, Belarus
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    867
  • Lastpage
    868
  • Abstract
    The characteristics are indicated of radiation-hard memory devices, made by OJSC “Integral” with consideration of the status and prospects of the news designs of the memory microcircuits.
  • Keywords
    EPROM; SRAM chips; EEPROM; OJSC integral; SRAM; microcircuits; radiation-hard memory devices; Assembly; EPROM; Ferroelectric films; Nonvolatile memory; Random access memory; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2229627