Title :
A novel HBT active transformer balanced Schottky diode mixer
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
This paper describes a unique HBT active transformer balun which has been monolithically integrated with a GaAs Schottky diode ring quad to construct a double balanced mixer which can operate from DC to >2 GHz. The HBT active balun transformer achieves \n\n\t\t
Keywords :
III-V semiconductors; MMIC mixers; Schottky diode mixers; UHF integrated circuits; UHF mixers; baluns; gallium arsenide; heterojunction bipolar transistors; 0 to 2 GHz; 2 V; GaAs; GaAs Schottky diode ring quad; HBT active transformer; LV battery powered applications; active transformer balun; balanced Schottky diode mixer; double balanced mixer; monolithic integration; multi-decade balanced performance; Bandwidth; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Low voltage; Mixers; Schottky diodes; Topology;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511184
