Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

Author

Neogi, A. ; Lee, C.W. ; Everitt, H.O. ; Kuroda, T. ; Tackeuchi, A. ; Yablonovitch, E.

Author_Institution

Dept. of Phys., Duke Univ., Durham, NC, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

258

Lastpage

259

Abstract

Summary form only given. The spontaneous emission (SE) rate of a system may be modified by altering the photon density of states (P-DOS) and the local strength of the electromagnetic modes. The P-DOS and the SE rate can also be modified when emitters are coupled to a surface plasmon (SP) of a metallic film. A single QW (SQW) can experience strong quantum electrodynamical coupling to a SP mode if placed within the SP fringing field penetration depth. The photoluminescence (PL) decay rate from a photoexcited QW is related to the SE rate. A broad PL peak is observed from the unsilvered InGaN SQW at 2.75 eV, along with smaller peaks at 3.2 eV and 3.4 eV from the InGaN reference layer and the GaN buffer layer, respectively.

Keywords

III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; spontaneous emission; surface plasmon resonance; time resolved spectra; wide band gap semiconductors; 2.75 eV; 3.2 eV; 3.4 eV; GaN; GaN buffer layer; InGaN; InGaN SQW; InGaN reference layer; fringing field penetration depth; local electromagnetic mode strength; photoexcited QW; photoluminescence decay rate; photon density of states; quantum electrodynamical coupling; resonant surface plasmon coupling; spontaneous emission rate enhancement; time resolved PL; Gallium compounds; Indium compounds; Photoluminescence; Quantum wells; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031393

Filename

1031393