DocumentCode :
2230146
Title :
Semi-empirical quantum correction model for electron concentration in symmetric double gate mosfets
Author :
Abdolkader, Tarek M. ; Fikry, Wael
Author_Institution :
Benha Higher Institute of Technology
fYear :
2004
fDate :
5-7 Sept. 2004
Firstpage :
549
Lastpage :
552
Keywords :
Carrier confinement; Charge carrier density; Doping; Electrons; Graphics; MOSFETs; Numerical simulation; Poisson equations; Potential well; Quantum computing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical, Electronic and Computer Engineering, 2004. ICEEC '04. 2004 International Conference on
Print_ISBN :
0-7803-8575-6
Type :
conf
DOI :
10.1109/ICEEC.2004.1374527
Filename :
1374527
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2230146
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