Title :
InGaAs/GaAsSb terahertz quantum cascade lasers
Author :
Detz, H. ; Deutsch, C. ; Nobile, M. ; Klang, P. ; Andrews, A.M. ; Schwarzer, C. ; Schrenk, W. ; Unterrainer, K. ; Strasser, G.
Author_Institution :
Center for Microand Nano Struct., Vienna Univ. of Technol., Vienna, Austria
Abstract :
We present THz QCLs based on the InGaAs/GaAsSb material system, which benefits from the low effective masses. The devices are emitting between 3.6-4.2 THz up to a temperature of 135K.
Keywords :
III-V semiconductors; effective mass; gallium arsenide; indium compounds; microwave photonics; quantum cascade lasers; InGaAs-GaAsSb; THz QCL; effective masses; frequency 3.6 THz to 4.2 THz; temperature 135 K; terahertz quantum cascade lasers; Effective mass; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum cascade lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
