• DocumentCode
    2230194
  • Title

    InGaAs/GaAsSb terahertz quantum cascade lasers

  • Author

    Detz, H. ; Deutsch, C. ; Nobile, M. ; Klang, P. ; Andrews, A.M. ; Schwarzer, C. ; Schrenk, W. ; Unterrainer, K. ; Strasser, G.

  • Author_Institution
    Center for Microand Nano Struct., Vienna Univ. of Technol., Vienna, Austria
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present THz QCLs based on the InGaAs/GaAsSb material system, which benefits from the low effective masses. The devices are emitting between 3.6-4.2 THz up to a temperature of 135K.
  • Keywords
    III-V semiconductors; effective mass; gallium arsenide; indium compounds; microwave photonics; quantum cascade lasers; InGaAs-GaAsSb; THz QCL; effective masses; frequency 3.6 THz to 4.2 THz; temperature 135 K; terahertz quantum cascade lasers; Effective mass; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum cascade lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2230194