Title :
Behavior Modeling of Programmable Metallization Cell Using Verilog-A
Author :
Dimplu, Darshan Anandappa ; Wang, Fei
Author_Institution :
Electr. Eng. Dept., California State Univ., Long Beach, CA, USA
Abstract :
Programmable metallization is a promising type of non-volatile memory that displays several advantages over the currently wide spread flash memory, such as higher writing speed, better scalability, and longer data retention period. The unique electrical behavior of programmable metallization cell has not been included in any popular EAD tools yet. Therefore, a behavior model of Programmable Metallization Cell is designed using Verilog-A language in this paper. This model can be easily imported into PSPICE to enhance circuit level design related to programmable metallization cell.
Keywords :
flash memories; hardware description languages; Verilog-A; data retention period; electrical behavior; flash memory; higher writing speed; nonvolatile memory; programmable metallization cell behavior model; Analytical models; Data models; Hardware design languages; Materials; Metallization; Resistance; Threshold voltage; Non-volatile memory; Verilog-A; device modeling;
Conference_Titel :
Information Technology: New Generations (ITNG), 2012 Ninth International Conference on
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4673-0798-7
DOI :
10.1109/ITNG.2012.107