Title :
Coherent nonlinear response from excitation induced shift in semiconductors
Author :
Shacklette, J.M. ; Cundiff, S.T.
Author_Institution :
Joint Inst. for Lab. Astrophys., Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
Summary form only given. An excitation induced shift (EIS) can result in a contribution to the transient four-wave-mixing (TFWM) signal. Experimentally, we detect the presence of EIS by spectrally resolving the TFWM signal from a strained InGaAs/GaAsP multiple quantum well. The strain increases the heavy-hole-light-hole splitting so that only the heavy hole exciton plus continuum is excited by the incident pulses.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; multiwave mixing; semiconductor quantum wells; spectral line shift; visible spectra; InGaAs-GaAsP; absorption spectrum; coherent nonlinear response; excitation induced shift; heavy hole exciton; heavy-hole light-hole splitting; modified optical Bloch equations; numerical results; spectral resolution; strained InGaAs/GaAsP multiple quantum well; transient four-wave-mixing; Excitons; Gallium compounds; Indium compounds; Optical mixing; Optical spectroscopy; Quantum wells;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031408
