Microwave sensor for noncontact measurements of semiconductors

The microwave sensor for measuring semiconductor parameters by non-contact microwave method has been developed. The results of the minority carrier lifetime (MCL) measurements in silicon using this sensor have been compared with the measurements made using the microstrip sensor of the previously known design [1]. It has been shown that when measuring MCL of the monocrystalline silicon samples with resistivity of more than 10 Ohm×cm, the obtained results are almost not different from the data obtained using microstrip microwave sensor, whose design is suggested in [1]. However, when measuring MCL of the multicrystalline silicon samples with resistivity of less than 0.5 Ohm×cm the sensitivity of the sensor suggested in [2] is significantly higher, to result in increasing accuracy of the MCL measurements.