Title :
Metal-over-gate MOSFET modeling for radio frequency IC applications
Author :
MacEachern, Leonard ; Manku, Tajinder
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
Metal-Over-Gate MOSFETs are analyzed for their high frequency properties. The distributed nature of the gate and metal over-gate are examined and an analysis of the small-signal parameters is presented. Simplified small-signal y-parameters are derived from the full analysis, and used to construct an equivalent small-signal lumped circuit model. Metal-Over-Gate MOSFETs are shown to have higher Gmax compared to traditional MOSFETs
Keywords :
CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; equivalent circuits; integrated circuit modelling; semiconductor device models; MOGFET; RF IC applications; distributed gate effects; equivalent lumped circuit model; equivalent small-signal circuit model; high frequency properties; metal-over-gate MOSFET modeling; radio frequency IC; small-signal parameters analysis; small-signal y-parameters; Application software; Application specific integrated circuits; CMOS technology; Capacitance; Integrated circuit interconnections; Integrated circuit modeling; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.856284
