Title :
Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices
Author :
Nash, S.J. ; Platzker, A. ; Struble, W.
Author_Institution :
Adv. Device Center, Raytheon Co., Andover, MA, USA
Abstract :
A fully distributed equivalent circuit PHEMT and MESFET model is presented in closed form expressions for single finger end-fed FET geometry. The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices which were subjected to equi-phase gate and drain excitations. Comparisons between measured data and model results are shown to be in excellent agreement for all S-parameters to 50 GHz regardless of unit gate width. Scaling issues are also investigated for the new distributed model.
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; UHF field effect transistors; equivalent circuits; gallium arsenide; high electron mobility transistors; inductance; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 0 to 50 GHz; GaAs; MESFET; PHEMT; S-parameters; distributed small signal model; frequency dependent gate resistance; fully distributed equivalent circuit; multi-fingered devices; mutual inductances; pseudomorphic HEMT; scaling issues; self inductances; single finger end-fed FET geometry; Electrical resistance measurement; Equivalent circuits; FETs; Fingers; Frequency dependence; Gallium arsenide; Geometry; MESFET circuits; PHEMTs; Solid modeling;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511216
