A high efficiency complementary GaAs power FET technology for single supply portable applications

A high efficiency enhancement mode power heterostructure FET has been developed for single supply portable applications. The device requires only a single 3 V supply for operation, making it an ideal candidate for portable applications. At 850 MHz, a 1.0 /spl mu/m/spl times/12 mm N-type FET exhibited a power output of 30.7 dBm, power gain of 10.6 dB, and a power-added efficiency of 60%, at a drain to source voltage of 3 V, and drain to source quiescent current of 150 mA. This device was fabricated on a standard Complementary GaAs (CGaAs) process flow, which is capable of simultaneously building low-voltage, low-power digital circuits (200 MHz), high-speed digital circuits (5 GHz), and RF power circuits (900 MHz).