• DocumentCode
    2230765
  • Title

    Giant wavelength-temperature dependence of VCSEL with thermally actuated cantilever structure

  • Author

    Nakahama, Masanori ; Sano, Hayato ; Nakata, Norihiko ; Matsutani, Akihiro ; Koyama, Fumio

  • Author_Institution
    Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present the modeling and the experimental result of a micro-machined VCSEL with a thermally actuated semiconductor/SiO2 cantilever structure. The modeling result shows a giant wavelength-temperature dependence of over 3.5 nm/K. The fabricated device exhibits a temperature dependence of 0.79 nm/K, which is 10 times larger than that of conventional VCSELs.
  • Keywords
    III-V semiconductors; aluminium compounds; cantilevers; gallium arsenide; quantum well lasers; surface emitting lasers; thermo-optical devices; GaAs-AlGaAs; SiO2; VCSEL; micromachining; temperature dependence; thermal actuator; thermally actuated cantilever structure; Distributed Bragg reflectors; Laser tuning; Temperature dependence; Temperature measurement; Thermal stresses; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2230765