Title :
Monolithic 40-GHz 670-mW HBT grid amplifier
Author :
Cheh-Ming Liu ; Sovero, E.A. ; Wu Jing Ho ; Higgins, J.A. ; De Lisio, M.P. ; Rutledge, D.B.
Author_Institution :
Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5 dB at 40 GHz with a 3-dB bandwidth of 1.8 GHz (4.5%). Here we also report comparisons of patterns and tuning curves between the measurements and theory. The grid includes base stabilizing capacitors which result in a highly stable grid. The maximum saturated output power is 670 mW at 40 GHz with a peak power-added efficiency of 4%. This is the first report of power measurements on the monolithic quasi-optical amplifier.
Keywords :
bipolar MIMIC; bipolar analogue integrated circuits; heterojunction bipolar transistors; millimetre wave amplifiers; 1.8 GHz; 4 percent; 40 GHz; 5 dB; 670 mW; active elements; bandwidth; base stabilizing capacitors; gain; heterojunction bipolar transistors; monolithic HBT grid amplifier; output power; pattern; power measurement; power-added efficiency; quasi-optical amplifier; tuning curve; Bandwidth; Capacitors; Frequency; Gain measurement; Heterojunction bipolar transistors; Impedance matching; Microwave Theory and Techniques Society; Polarization; Resistors; Slabs;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511227
