DocumentCode :
2230774
Title :
The influence of electrical characteristics of microwave magnetron power source on the process of plasma stripping from silicon plates surface
Author :
Bordusov, S.V. ; Madveyko, S.I.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2011
fDate :
12-16 Sept. 2011
Firstpage :
986
Lastpage :
987
Abstract :
The results of experimental research of the dependence of the rate of photoresist films ashing from the surface of silicon plates by microwave discharge plasma of air and O2 vs. operational processing modes are presented. Plasma chemical processing had been carried out in a resonator-type plasmatron with partial filling by plasma (Vplasma ≥ 9500 cm3) of the resonant cavity volume. Experiments were carried out using, as a part of a high voltage power source, the microwave magnetron of the schemes of one-or two-half-period straightening with doubling voltage.
Keywords :
cavity resonators; elemental semiconductors; magnetrons; microwave tubes; photoresists; silicon; Si; electrical characteristics; microwave discharge plasma; microwave magnetron power source; photoresist films; plasma chemical processing; plasma stripping process; resonant cavity volume; resonator-type plasmatron; silicon plate surface; Cavity resonators; Chemicals; Films; Informatics; Magnetic resonance; Plasmas; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
Type :
conf
Filename :
6069233
Link To Document :
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