The influence of electrical characteristics of microwave magnetron power source on the process of plasma stripping from silicon plates surface

Author

Bordusov, S.V. ; Madveyko, S.I.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2011

fDate

12-16 Sept. 2011

Firstpage

986

Lastpage

987

Abstract

The results of experimental research of the dependence of the rate of photoresist films ashing from the surface of silicon plates by microwave discharge plasma of air and O₂ vs. operational processing modes are presented. Plasma chemical processing had been carried out in a resonator-type plasmatron with partial filling by plasma (V_plasma ≥ 9500 cm³) of the resonant cavity volume. Experiments were carried out using, as a part of a high voltage power source, the microwave magnetron of the schemes of one-or two-half-period straightening with doubling voltage.

Keywords

cavity resonators; elemental semiconductors; magnetrons; microwave tubes; photoresists; silicon; Si; electrical characteristics; microwave discharge plasma; microwave magnetron power source; photoresist films; plasma chemical processing; plasma stripping process; resonant cavity volume; resonator-type plasmatron; silicon plate surface; Cavity resonators; Chemicals; Films; Informatics; Magnetic resonance; Plasmas; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4577-0883-1

Type

conf

Filename

6069233