DocumentCode
2230985
Title
Ferroelectric nonvolatile memories for embedded applications
Author
Jones, Robert E., Jr.
Author_Institution
Dept. of Mater. Res. & Strategic Technol., Motorola Inc., Austin, TX, USA
fYear
1998
fDate
11-14 May 1998
Firstpage
431
Lastpage
438
Abstract
Ferroelectric nonvolatile memories offer low voltage operation and fast write speeds that makes them attractive for embedded applications. The fundamentals of ferroelectric materials and ferroelectric memory operation are reviewed. Also discussed is the process integration of ferroelectric capacitors into a CMOS flow. A test circuit which embedded an 8 Kbit ferroelectric memory into a Motorola HC 11E9 microcontroller is reported
Keywords
CMOS integrated circuits; ferroelectric capacitors; ferroelectric storage; integrated memory circuits; microcontrollers; random-access storage; 8 Kbit; CMOS process flow integration; FeRAM; Motorola HC 11E9 microcontroller; embedded applications; fast write speeds; ferroelectric capacitors; ferroelectric nonvolatile memories; low voltage operation; Capacitors; Circuit testing; Ferroelectric materials; Lattices; Low voltage; Microcontrollers; Nonvolatile memory; Personal digital assistants; Polarization; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location
Santa Clara, CA
Print_ISBN
0-7803-4292-5
Type
conf
DOI
10.1109/CICC.1998.695013
Filename
695013
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