• DocumentCode
    2231017
  • Title

    Mode-locked fiber laser with few-layer epitaxial graphene grown on 6H-SiC substrates

  • Author

    Liu, Jiang ; Wei, Rusheng ; Xu, Xiangang ; Wang, Pu

  • Author_Institution
    Inst. of Laser Eng., Beijing Univ. of Technol., Beijing, China
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Few-layer epitaxial graphene grown on 6H silicon carbide (SiC) wafers by thermal decomposition was used as novel saturable absorbers for mode-locking of ytterbium-doped fiber lasers, which generated 19nJ single pulse energy at 1.05MHz repetition rate.
  • Keywords
    epitaxial layers; fibre lasers; graphene; laser mode locking; optical saturable absorption; silicon compounds; ytterbium; C-SiC; energy 19 nJ; few layer epitaxial graphene; mode locked fiber laser; saturable absorber; thermal decomposition; Epitaxial growth; Fiber lasers; Laser mode locking; Optical fiber couplers; Optical fiber devices; Optical fiber polarization; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950265