Title :
Femtosecond pulse generation at 1530nm using a GaInNAsSb SESAM
Author :
Leburn, C.G. ; Metzger, N.K. ; Brown, C.T.A. ; Sibbett, W. ; Calvez, S. ; Burns, D. ; Sun, H.D. ; Dawson, M.D. ; Du, M. Le ; Harmand, J.C.
Author_Institution :
Sch. of Phys. & Astron., St. Andrews Univ., St. Andrews
Abstract :
We describe the operation of a femtosecond Cr4+:YAG laser that has been mode locked using a novel GaInNAsSb SESAM. 230 fs pulses were generated at an average output power of 280 mW.
Keywords :
III-V semiconductors; chromium; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; optical pulse generation; optical saturable absorption; solid lasers; Cr4+:YAG laser; GaInNAsSb; GalnNAsSb SESAM; YAG:Cr; femtosecond laser; femtosecond pulse generation; laser mode locking; power 280 mW; semiconductor saturable absorber mirrors; time 230 fs; wavelength 1530 nm; Laser excitation; Laser mode locking; Mirrors; Optical pulse generation; Power generation; Power lasers; Pulse generation; Pump lasers; Semiconductor lasers; Ultrafast optics; (140.4050) Mode-locked lasers; (140.7090) Ultrafast lasers; (230.5590) Quantum-well devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
