DocumentCode
2232070
Title
Extraction of Fowler-Nordheim parameters of thin SiO2 oxide film including polysilicon gate depletion: validation with an EEPROM memory cell
Author
Harabech, N. ; Bouchakour, R. ; Canet, P. ; Pannier, P. ; Sorbier, J.P.
Author_Institution
Inst. Charles Fabry, Univ. de Provence, France
Volume
2
fYear
2000
fDate
2000
Firstpage
441
Abstract
The simulation of EEPROM memory characteristics is fundamental to the design and optimization of low-power non-volatile memory products. This paper presents a new method for extraction of Fowler-Nordheim parameters in a thin (polysilicon-gate) SiO2 oxide. It consists of extraction of the oxide thickness from MOS capacitance characteristics including polysilicon-gate depletion. Then, we use the oxide thickness to estimate the electric field for the extraction of the FN current parameters
Keywords
EPROM; MOSFET; capacitance; dielectric thin films; electric fields; semiconductor device models; silicon compounds; EEPROM memory cell; EEPROM memory characteristics simulation; FN current parameters; Fowler-Nordheim parameters; MOS capacitance characteristics; Si-SiO2; electric field estimation; floating gate MOSFET; low-power nonvolatile memory products; oxide thickness extraction; parameters extraction; polysilicon gate depletion; thin SiO2 oxide film; Capacitance; Capacitance-voltage characteristics; Design optimization; EPROM; Electrons; MOSFETs; Nonvolatile memory; Tunneling; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.856359
Filename
856359
Link To Document