DocumentCode
2232176
Title
A power-adaptive CMOS class E RF tuned power amplifier for wireless communications
Author
Tu, Steve Hung-Lung
Author_Institution
Dept. of Electron. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
fYear
2003
fDate
17-20 Sept. 2003
Firstpage
365
Lastpage
368
Abstract
A novel output power-controllable configuration based on high-Q varactors has been proposed. The circuit configuration illustrates a high potential to be fabricated in integrated form. In addition, the adaptive technique allows the employment of high-Q bond-wire inductors with a certain degree of inductance deviation, which ensures very little power loss in the inductors.
Keywords
CMOS analogue integrated circuits; Q-factor; circuit simulation; circuit tuning; inductors; integrated circuit design; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; varactors; RFIC; bond-wire inductance deviation; class E RF tuned power amplifier; high-Q bond-wire inductors; high-Q varactors; low inductor power loss; power-adaptive CMOS power amplifier; power-controllable amplifier; wireless communications; Bonding; Circuits; Employment; Inductance; Inductors; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Varactors; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
SOC Conference, 2003. Proceedings. IEEE International [Systems-on-Chip]
Print_ISBN
0-7803-8182-3
Type
conf
DOI
10.1109/SOC.2003.1241544
Filename
1241544
Link To Document