• DocumentCode
    2232407
  • Title

    Differential carrier lifetimes and efficiency of InGaN/GaN quantum well and quantum dot light emitting diodes

  • Author

    Banerjee, Animesh ; Zhang, Meng ; Bhattacharya, Pallab

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Temperature-dependent efficiency and differential carrier lifetimes have been measured on InGaN/GaN quantum well and quantum dot LEDs. The roles of Auger recombination and carrier leakage in LED efficiency roll-off are elucidated.
  • Keywords
    Auger effect; III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; Auger recombination; InGaN-GaN; LED; carrier leakage; differential carrier lifetimes; quantum dot light emitting diodes; quantum well light emitting diodes; temperature-dependent efficiency; Gallium nitride; Light emitting diodes; Plasma temperature; Quantum well devices; Radiative recombination; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2232407