DocumentCode :
2232634
Title :
Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy
Author :
Kaku, S. ; Eto, H. ; Nakamura, K. ; Watanabe, Y.
Author_Institution :
Kyushu Univ., Fukuoka, Japan
fYear :
2009
fDate :
23-27 Aug. 2009
Firstpage :
1
Lastpage :
4
Abstract :
The nanoscopic properties of the clean, free surface of a BaTiO3 single crystal in an ultra-high vacuum is examined. Atomic force microscopy, piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180deg domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180deg domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency, or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180deg domains.
Keywords :
atomic force microscopy; barium compounds; dielectric polarisation; electric domains; ferroelectric materials; BaTiO3; Kelvin force microscopy; UHV-sanning probe microscopy; atomic force microscopy; conventional explanations; depolarization field; domain structure; ferroelectrics; intrinsic electrostatic shielding mechanism; nanoscopic properties; piezoelectric force microscopy; polarization bound charge; potential difference; Atomic force microscopy; Atomic measurements; Contamination; Electrostatics; Ferroelectric materials; Force measurement; Kelvin; Polarization; Pollution measurement; Surface cleaning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
ISSN :
1099-4734
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2009.5307523
Filename :
5307523
Link To Document :
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