DocumentCode
2232716
Title
Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature
Author
Boubanga-Tombet, Stephane ; Otsuji, Taiichi ; Teppe, Frederic ; Torres, Jeremy ; Knap, Wojciech
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. Our results shows that properly exciting nanotransistors can pave the way for new class of coherent and easily tunable THz sources.
Keywords
III-V semiconductors; electro-optical effects; gallium arsenide; high electron mobility transistors; indium compounds; nanoelectronics; terahertz wave generation; InGaAs; coherent terahertz emission; nanometer gate length high electron mobility transistor; nanometric field effect transistor; nanotransistors; reflective electro-optic sampling measurement; temperature 293 K to 298 K; tunable terahertz emission; HEMTs; Logic gates; Plasma temperature; Plasma waves; Stimulated emission; Temperature measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950336
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