Title :
Recombination dynamics in quantum dot semiconductor saturable absorber mirrors (QD-SESAMs)
Author :
Maas, D.J.H.C. ; Bellancourt, A.R. ; Hoffmann, M. ; Rudin, B. ; Golling, M. ; Sudmeyer, T. ; Keller, U.
Author_Institution :
Dept. of Phys., ETH Zurich, Zurich
Abstract :
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
Keywords :
III-V semiconductors; annealing; indium compounds; integrated optics; laser mirrors; laser mode locking; optical modulation; optical pulse generation; optical saturable absorption; quantum dot lasers; semiconductor growth; surface emitting lasers; InAs; modelocked VECSEL pulses; modulation strength ratio; post-growth annealing; quantum dot semiconductor saturable absorber mirrors; recombination dynamics mechanism; recovery time reduction; semiconductor growth temperature; Distributed Bragg reflectors; Indium; Mirrors; Optical pulse generation; Quantum dots; Radiative recombination; Spontaneous emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; (140.4050) Mode-locked lasers; (320.7080) Ultrafast devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
