Probing ultrafast dynamics of electrons and holes in graphene

Author

Dawlaty, Jahan M. ; Shivaraman, Shriram ; Chandrashekhar, Mvs ; Rana, Farhan ; Spencer, Michael G.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Using pump-probe techniques, we study the ultrafast relaxation dynamics of photoexcited carriers in graphene. We find an initial fast relaxation transient (70-120 fs), followed by a slower relaxation process (0.4-1.7 ps). We relate the measured time scales to carrier-carrier and carrier-phonon intraband and interband scattering processes and also to crystal disorder in the material.

Keywords

carbon; carrier relaxation time; high-speed optical techniques; nanostructured materials; phonons; C; carrier-carrier interband scattering; carrier-carrier intraband scattering; carrier-phonon interband scattering; carrier-phonon intraband scattering; crystal disorder; fast relaxation transient; graphene; photoexcited carriers; pump-probe techniques; time 0.4 ps to 1.7 ps; time 70 fs to 120 fs; ultrafast dynamics probing; ultrafast relaxation dynamics; Charge carrier processes; Nonlinear optics; Optical noise; Optical pumping; Optical scattering; Optical sensors; Probes; Spontaneous emission; Ultrafast optics; X-ray scattering; (160.6000) Semiconductor materials; (320.7120) Ultrafast phenomena;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571319