• DocumentCode
    2233103
  • Title

    Power Harvesting Circuits in 90 nm CMOS

  • Author

    Halvorsen, Trygve K. ; Hjortland, Håkon A. ; Lande, Tor Sverre Bassen

  • Author_Institution
    Dept. of Inf., Univ. of Oslo, Oslo, Norway
  • fYear
    2008
  • fDate
    16-17 Nov. 2008
  • Firstpage
    154
  • Lastpage
    157
  • Abstract
    The purpose of this paper is to explore power harvesting capabilities in nanometer technology. Novel charge pump improvements using the back-gate or well of MOS devices improve efficiency as well as sensitivity. The proposed circuits are implemented in 90 nm CMOS. Measured performance will be provided.
  • Keywords
    CMOS integrated circuits; charge pump circuits; nanotechnology; sensitivity analysis; CMOS technology; MOS device; back-gate; charge pump improvement; nanometer technology; power harvesting circuit; sensitivity; size 90 nm; CMOS technology; Capacitors; Charge pumps; Clocks; Diodes; Integrated circuit technology; MOSFETs; Space exploration; Space technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    NORCHIP, 2008.
  • Conference_Location
    Tallinn
  • Print_ISBN
    978-1-4244-2492-4
  • Electronic_ISBN
    978-1-4244-2493-1
  • Type

    conf

  • DOI
    10.1109/NORCHP.2008.4738301
  • Filename
    4738301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2233103