Title :
Power Harvesting Circuits in 90 nm CMOS
Author :
Halvorsen, Trygve K. ; Hjortland, Håkon A. ; Lande, Tor Sverre Bassen
Author_Institution :
Dept. of Inf., Univ. of Oslo, Oslo, Norway
Abstract :
The purpose of this paper is to explore power harvesting capabilities in nanometer technology. Novel charge pump improvements using the back-gate or well of MOS devices improve efficiency as well as sensitivity. The proposed circuits are implemented in 90 nm CMOS. Measured performance will be provided.
Keywords :
CMOS integrated circuits; charge pump circuits; nanotechnology; sensitivity analysis; CMOS technology; MOS device; back-gate; charge pump improvement; nanometer technology; power harvesting circuit; sensitivity; size 90 nm; CMOS technology; Capacitors; Charge pumps; Clocks; Diodes; Integrated circuit technology; MOSFETs; Space exploration; Space technology; Threshold voltage;
Conference_Titel :
NORCHIP, 2008.
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-2492-4
Electronic_ISBN :
978-1-4244-2493-1
DOI :
10.1109/NORCHP.2008.4738301
