Self-isolated gain-enhanced sense amplifier

Author

Huang, Hong-Yi ; Chen, Shih-Lim

Author_Institution

Dept. of Electron. Eng., Fu-Jen Univ., Taiwan

fYear

2002

fDate

2002

Firstpage

57

Lastpage

60

Abstract

The work describes a self-isolated gain-enhanced sense amplifier (SGSA) for high-speed memory. A pair of incoming signals with large capacitive load can be self-isolated to the input nodes of the SGSA during the transient operation. The input nodes of the SGSA are then regenerated through the self-feedback control of the sense amplifier. Thus the gain is enhanced and the speed and driving capability is improved. The simulations using a 0.25 μm CMOS process parameters show that the SGSA has 10-77% speed improvement compared to the proposed sense amplifiers.

Keywords

CMOS memory circuits; SRAM chips; feedback amplifiers; high-speed integrated circuits; 0.25 micron; CMOS; SGSA; SRAM; capacitive load; driving capability; gain-enhanced sense amplifier; high-speed memory; input nodes; self-feedback control; self-isolated amplifier; transient operation; Differential amplifiers; Feedback; High speed integrated circuits; Integrated circuit interconnections; Laboratories; Logic circuits; Operational amplifiers; Random access memory; Signal design; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-7363-4

Type

conf

DOI

10.1109/APASIC.2002.1031531

Filename

1031531