Title :
Approximate process-parameter dependent symbolic calculation of harmonic distortion in log-domain: the lossy integrator case-study
Author :
Drakakis, E.M. ; Payne, A.J.
Author_Institution :
Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
This paper attempts to estimate in an approximate way the impact of the basic bipolar process parameters upon harmonic distortion for the log-domain lossy integrator case. A symbolic transistor-level calculation is elaborated, based on the Charge-Control-Model (CCM) for the Bipolar Junction Transistor (BJT). Results correlating the BJT finite beta and parasitic base and emitter resistance with the harmonic distortion level present at the output are provided
Keywords :
bipolar analogue integrated circuits; harmonic distortion; integrating circuits; symbol manipulation; BJT finite beta; BJT parasitic base resistance; BJT parasitic emitter resistance; approximate method; bipolar junction transistor; bipolar process parameters; charge control model; harmonic distortion; log-domain lossy integrator; process-parameter dependent symbolic calculation; symbolic transistor-level calculation; Circuit synthesis; Circuit topology; Educational institutions; Electronic switching systems; Harmonic distortion; Nonlinear filters; Power supplies; Resistors; Steady-state; Transconductors;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.856402
