DocumentCode :
2233152
Title :
A 39-46 GHz MMIC HBT triple-push VCO using cascode configuration
Author :
Chen, Po-Yo ; Tang, Yu-Lung ; Wang, Huei ; Wang, Yu-Chi ; Chao, Pane-Chane ; Chen, Chung-Hsu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2002
fDate :
2002
Firstpage :
61
Lastpage :
64
Abstract :
This paper reports the development of a Q-band (33-50 GHz) triple-push VCO using GaAs heterojunction bipolar transistor (HBT) MMIC technology. The circuit adopts cascode configuration of HBTs in order to increase the negative resistance at high frequency and thus to obtain a higher oscillation frequency. Based on the measured results, MMIC VCO achieves a tuning frequency range of 39 to 46 GHz.
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MIMIC; circuit tuning; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; millimetre wave oscillators; negative resistance; voltage-controlled oscillators; 33 to 50 GHz; 39 to 46 GHz; GaAs; GaAs MMIC HBT triple-push VCO; GaAs heterojunction bipolar transistor MMIC technology; Q-band triple-push VCO; cascode configuration; high frequency negative resistance; millimeter-wave frequency sources; oscillation frequency; tuning frequency range; Circuit optimization; Electrical resistance measurement; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Inductors; MMICs; Resistors; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-7363-4
Type :
conf
DOI :
10.1109/APASIC.2002.1031532
Filename :
1031532
Link To Document :
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