A 2.5 Gbps CMOS laser diode driver with preemphasis technique

Author

Chen, Guo-Cheng ; Chen, Wei-Zen ; Luo, Ren-Hong

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

fYear

2002

fDate

2002

Firstpage

65

Lastpage

68

Abstract

This paper describes the design of a 2.5 Gbps laser diode (LD) driver circuit in a 0.35μm digital CMOS process. The LD driver delivers a biased current range from 5 to 10 mA and a modulation current of 20 mA. The biased current is programmable by a 3-bit D/A. High current driving capability as well as agile switching speed are achieved by inductive peaking and preemphasis techniques. Operating under a single 3 V power supply, the maximum power consumption is 150 mW. Chip size is 1200μm × 900μm.

Keywords

CMOS analogue integrated circuits; driver circuits; laser accessories; low-power electronics; semiconductor lasers; 0.35 micron; 150 mW; 2.5 Gbit/s; 20 mA; 3 V; 5 to 10 mA; CMOS; biased current range; current driving capability; inductive peaking; laser diode driver; modulation current; power consumption; preemphasis technique; switching speed; CMOS process; Diode lasers; Driver circuits; High speed optical techniques; Optical design; Optical modulation; Power control; Preamplifiers; Stimulated emission; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-7363-4

Type

conf

DOI

10.1109/APASIC.2002.1031533

Filename

1031533