Title :
Performance and reliability of asymmetric LDD devices and logic gates
Author :
Chen, Jone F. ; Tao, Jiang ; Fang, Peng ; Hu, Chenming
Author_Institution :
California Univ., Berkeley, CA, USA
Abstract :
The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared
Keywords :
CMOS logic circuits; MOSFET; hot carriers; integrated circuit reliability; logic gates; semiconductor device reliability; NAND structures; NMOSFET; NOR structures; PMOSFET; asymmetric LDD devices; hot-carrier lifetime; inverter structures; logic gates; reliability; ring oscillators; Degradation; Delay; Hot carriers; Inverters; Logic devices; Logic gates; MOS devices; MOSFET circuits; Maintenance; Ring oscillators;
Conference_Titel :
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-4292-5
DOI :
10.1109/CICC.1998.695034
