The design and analysis of a RF CMOS bandpass filter

Author

Chang, Yuyu ; Choma, John, Jr. ; Wills, Jack

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

2

fYear

2000

fDate

2000

Firstpage

625

Abstract

A high-Q filter capable of operating in the GHz range is proposed. This filter, which is suitable for RF applications, utilizes two effective Q-enhancement techniques to circumvent the low-Q characteristics inherent in the circuit. Simulation results employing standard 0.5 μm CMOS technology have successfully verified that the center frequency tuning and hybrid Q-tuning techniques operate between 625 MHz and 1.68 GHz center frequencies with Q ranging from 12 to over 300. Two tunable bandpass filters with center frequencies at 876 MHz and 1.68 GHz have been designed to have 37 dB and 31.4 dB voltage gain, -30 dBm and -31 dBm IIP3, and 4.8 dB and 5.5 dB NF, respectively. Both filters have quality factors equal to 33 and power dissipation is equal to 24.3 mW

Keywords

CMOS analogue integrated circuits; Q-factor; UHF filters; UHF integrated circuits; active filters; band-pass filters; circuit tuning; integrated circuit design; integrated circuit noise; linear network analysis; linear network synthesis; 24.3 mW; 31.4 dB; 37 dB; 4.8 dB; 5.5 dB; 625 MHz to 1.68 GHz; 876 MHz; Q-enhancement techniques; RF CMOS bandpass filter; UHF filter; center frequency tuning technique; high-Q filter; hybrid Q-tuning technique; noise analysis; quality factors; tunable bandpass filters; Band pass filters; CMOS technology; Circuit optimization; Circuit simulation; Gain; Noise measurement; Radio frequency; Tunable circuits and devices; Tuning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.856406

Filename

856406