Title :
Enhanced electro-optic effect in InAs/GaAs quantum dots
Author :
Redding, B. ; Long, X. ; Faleev, N. ; Shi, S. ; Prather, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE
Abstract :
The electro-optic properties of InAs/GaAs quantum dots are studied in an external Mach-Zehnder interferometer setup. The InAs/GaAs quantum dots are found to increase modulation relative to bulk GaAs and exhibit an electro-optic coefficient of 26 pm/V.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; electro-optical effects; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; semiconductor quantum dots; InAs-GaAs; MBE; electro-optic coefficient; electro-optic properties; external Mach-Zehnder interferometer setup; external modulator setup; semiconductor quantum dots; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Optical buffering; Optical fiber couplers; Optical fiber testing; Optical interferometry; Optical waveguides; Quantum dots; Voltage; (190.4360) Nonlinear optical devices; (190.4720) Optical nonlinearities of condensed matter;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
