Low Noise Amplifier Architecture Analysis for OFDM-UWB System in 0.18μm CMOS

Author

Wang, Peng ; Jonsson, Fredrik ; Tenhunen, Hannu ; Zhou, Dian ; Zheng, Li-Rong

Author_Institution

ECS/ICT, R. Inst. of Technol. (KTH), Stockholm, Sweden

fYear

2008

fDate

16-17 Nov. 2008

Firstpage

184

Lastpage

189

Abstract

This paper analyzes architectures of the low noise amplifier (LNA) for orthogonal-frequency-division-multiplexing ultra-wideband (OFDM-UWB) application. Until now, most UWB LNA implementations are focusing how to realize a single LNA covering the whole frequency band. In this work three popular wide-band LNA architectures are compared to a proposed parallel LNA architecture in which different amplifiers cover different frequency bands. Our study reveals that by reusing the source degenerated inductor between the different frequency bands, the parallel LNA architecture can achieve better performance than the single wide-band LNA (S11≪-10 dB, voltage gain≫15 dB, NF≪4.5 dB, power consumption≪10 mW) at the expense of a slightly increased circuit area.

Keywords

CMOS integrated circuits; OFDM modulation; low noise amplifiers; ultra wideband communication; wideband amplifiers; 0.18 μm CMOS; OFDM-UWB system; low noise amplifier architecture analysis; orthogonal-frequency-division-multiplexing ultra-wideband; parallel LNA architecture; wide-band LNA architectures; Broadband amplifiers; Circuits; Energy consumption; HEMTs; Impedance matching; Low-noise amplifiers; Noise measurement; Parasitic capacitance; Topology; Ultra wideband technology; 0.18μm CMOS; LNA; Parallel Architecture; UWB;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2008.

Conference_Location

Tallinn

Print_ISBN

978-1-4244-2492-4

Electronic_ISBN

978-1-4244-2493-1

Type

conf

DOI

10.1109/NORCHP.2008.4738308

Filename

4738308