DocumentCode :
2233285
Title :
Low Noise Amplifier Architecture Analysis for OFDM-UWB System in 0.18μm CMOS
Author :
Wang, Peng ; Jonsson, Fredrik ; Tenhunen, Hannu ; Zhou, Dian ; Zheng, Li-Rong
Author_Institution :
ECS/ICT, R. Inst. of Technol. (KTH), Stockholm, Sweden
fYear :
2008
fDate :
16-17 Nov. 2008
Firstpage :
184
Lastpage :
189
Abstract :
This paper analyzes architectures of the low noise amplifier (LNA) for orthogonal-frequency-division-multiplexing ultra-wideband (OFDM-UWB) application. Until now, most UWB LNA implementations are focusing how to realize a single LNA covering the whole frequency band. In this work three popular wide-band LNA architectures are compared to a proposed parallel LNA architecture in which different amplifiers cover different frequency bands. Our study reveals that by reusing the source degenerated inductor between the different frequency bands, the parallel LNA architecture can achieve better performance than the single wide-band LNA (S11≪-10 dB, voltage gain≫15 dB, NF≪4.5 dB, power consumption≪10 mW) at the expense of a slightly increased circuit area.
Keywords :
CMOS integrated circuits; OFDM modulation; low noise amplifiers; ultra wideband communication; wideband amplifiers; 0.18 μm CMOS; OFDM-UWB system; low noise amplifier architecture analysis; orthogonal-frequency-division-multiplexing ultra-wideband; parallel LNA architecture; wide-band LNA architectures; Broadband amplifiers; Circuits; Energy consumption; HEMTs; Impedance matching; Low-noise amplifiers; Noise measurement; Parasitic capacitance; Topology; Ultra wideband technology; 0.18μm CMOS; LNA; Parallel Architecture; UWB;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
NORCHIP, 2008.
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-2492-4
Electronic_ISBN :
978-1-4244-2493-1
Type :
conf
DOI :
10.1109/NORCHP.2008.4738308
Filename :
4738308
Link To Document :
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