Title :
A large signal DC model for GaAs/Ga1-xAlxAs heterojunction bipolar transistors
Author :
Grossman, P. Chris ; Oki, A.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
An empirical large-signal DC model with temperature dependence that accurately characterizes heterojunction bipolar transistor (HBT) performance over eight decades of current is discussed. Simple methods for extracting the model parameters from measurements are included. When the transistor is simulated wit these parameters and an appropriate thermal circuit is used, the characteristic I-V curves for the device, showing self-heating effects, can be reproduced
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAs-GaAlAs; characteristic I-V curves; heterojunction bipolar transistors; large signal DC model; model parameters; self-heating effects; temperature dependence; thermal circuit; Bipolar transistors; Circuit simulation; Circuit testing; Current density; Gallium arsenide; Heating; Heterojunction bipolar transistors; Integrated circuit modeling; Molecular beam epitaxial growth; Temperature dependence;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69504
