Title :
A 2.7 V 900 MHz/1.9 GHz dual-band transceiver IC for digital wireless communication
Author :
Tham, Joo Leong ; Margarit, Mihai ; Pregardier, Bernd ; Hull, Chris ; Carr, F.
Author_Institution :
Rockwell Int. Corp., Newport Beach, CA, USA
Abstract :
A 2.7 V 900 MHz/1.9 GHz dual-band transceiver IC consisting of receive, transmit and local oscillator sections is presented. The transmit section achieves an unwanted sideband-suppression of -43 dBc, LO leakage of -59 dBc, 3rd order spurious rejection of -70 dBc. The transmit output noise level is -165 dBc/Hz at a 20 MHz offset from the carrier. The on-chip VHF oscillator has a phase noise level of -106 dBc/Hz at 100 kHz offset when operating at 800 MHz. The receive section has 36 dB of gain with 36 dB of gain range in 4 steps
Keywords :
UHF integrated circuits; bipolar integrated circuits; cellular radio; digital radio; elemental semiconductors; silicon; transceivers; 1.9 GHz; 2.7 V; 36 dB; 900 MHz; LO leakage; Si; Si bipolar process; digital wireless communication; dual-band transceiver IC; local oscillator section; onchip VHF oscillator; phase noise level; receive section; third-order spurious rejection; transmit section; unwanted sideband-suppression; Digital integrated circuits; Dual band; Local oscillators; Noise level; Phase frequency detector; RF signals; Radio frequency; Transceivers; Voltage-controlled oscillators; Wireless communication;
Conference_Titel :
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-4292-5
DOI :
10.1109/CICC.1998.695040
