Tunable injection current compensation architecture for high fill-factor self-buffered active pixel sensor

Author

Chang, Hsien-Chun ; King, Ya-Chin

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2002

fDate

2002

Firstpage

101

Lastpage

104

Abstract

A high fill-factor self-buffered active pixel sensor and a tunable injection current compensation architecture for high dynamic range imager is proposed for scaled CMOS technology. The new cell, including a photodiode, is formed by n-well and p-type substrate and a single-transistor output buffer can achieve fill-factor of 55%. Dynamic range of up to 120 dB is projected by simulation results. Experimental results for the new structure and simulated design of the circuit are discussed in this work.

Keywords

CMOS image sensors; buffer circuits; circuit CAD; circuit simulation; circuit tuning; compensation; integrated circuit design; integrated optoelectronics; photodiodes; CMOS image sensor; high fill-factor self-buffered active pixel sensor; imager dynamic range; n-well/p-type substrate; photodiode; scaled CMOS technology; simulated circuit design; simulation; single-transistor output buffer; tunable injection current compensation architecture; CMOS image sensors; CMOS technology; Circuit simulation; Costs; Diodes; Dynamic range; Equivalent circuits; Pixel; Tunable circuits and devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-7363-4

Type

conf

DOI

10.1109/APASIC.2002.1031542

Filename

1031542