A 5.4GHz 90-nm CMOS Digitally Controlled LC Oscillator with 21% Tuning Range, 1.1MHz resolution, and 180dB FOM

Author

Lu, Ping ; Sjöland, Henrik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

fYear

2008

fDate

16-17 Nov. 2008

Firstpage

223

Lastpage

226

Abstract

A 5.4 GHz digitally controlled oscillator (DCO) has been implemented in a 90-nm CMOS process. It has three different frequency control words, coarse, medium, and fine. The coarse control bank uses MIM capacitors and differential MOS switches. The other banks use MOS varactors. The phase noise was measured at the output of an on-chip divide by 2 circuit. It is -132 dBc/Hz at 3 MHz offset from the 2.7 GHz carrier. The power consumption of the oscillator is 7.8 mW from a 1.2 V supply, resulting in a figure of merit (FOM) of 182 dB. The worst case FOM is 180 dB over the 21% tuning range.

Keywords

CMOS digital integrated circuits; MIM devices; RLC circuits; capacitor storage; circuit tuning; frequency control; microwave oscillators; CMOS digitally controlled LC oscillator; MIM capacitors; MOS varactors; coarse control bank; differential MOS switches; figure of merit; frequency 1.1 MHz; frequency 2.7 GHz; frequency 5.4 GHz; frequency control; noise figure 180 dB; phase noise; power consumption; size 90 nm; CMOS process; Digital control; Frequency control; MIM capacitors; Noise measurement; Oscillators; Phase noise; Switches; Tuning; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2008.

Conference_Location

Tallinn

Print_ISBN

978-1-4244-2492-4

Electronic_ISBN

978-1-4244-2493-1

Type

conf

DOI

10.1109/NORCHP.2008.4738316

Filename

4738316