• DocumentCode
    2233462
  • Title

    Terahertz-field-induced carrier-wave Rabi oscillations in n-type GaAs

  • Author

    Gaal, P. ; Kuehn, W. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hey, R.

  • Author_Institution
    Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Carrier-wave Rabi oscillations between bound impurity levels in n-type GaAs are demonstrated by ultrafast THz propagation experiments for driving fields up to 5 kV/cm. For stronger fields the two-level approach breaks down.
  • Keywords
    III-V semiconductors; gallium arsenide; nonlinear optics; optical materials; GaAs; carrier-wave Rabi oscillations; n-type GaAs; ultrafast THz propagation; Electromagnetic coupling; Frequency; Gallium arsenide; Infrared spectra; Neodymium; Nonlinear optics; Optical scattering; Pulse measurements; Stimulated emission; Ultrafast optics; (190.5970) Semiconductor nonlinear optics including MQW; (300.6270) Spectroscopy, far infrared;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4571345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2233462