Title :
Nonlinear THz-pump/THz-probe measurements of semiconductor carrier dynamics
Author :
Lindenberg, A.M. ; Wen, H. ; Szilagyi, E.
Author_Institution :
PULSE Center, Stanford Linear Accel. Center, Menlo Park, CA
Abstract :
A table-top THz source has been employed to study the nonlinear response of semiconductors to near-half-cycle femtosecond pulses. We report nonlinear field-induced changes in the far infrared absorption coefficient, associated with impact ionization processes.
Keywords :
absorption coefficients; high-speed optical techniques; impact ionisation; nonlinear optics; submillimetre waves; THz-probe measurement; THz-pump measurement; far infrared absorption coefficient; impact ionization; semiconductor carrier dynamics; Charge carrier density; Electromagnetic wave absorption; Gallium arsenide; Impact ionization; Nonlinear optics; Optical pulses; Pulse generation; Pulse measurements; Temperature; Ultrafast optics; (190.7110) ultrafast nonlinear optics; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
