DocumentCode
2233500
Title
Optical detection of THz-induced strong field effects in ensembles of neutral donors
Author
Allen, Dan G. ; Kim, Sangwoo ; Sherwin, Mark S.
Author_Institution
Dept. of Phys., Univ. of California Santa Barbara, Santa Barbara, CA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Narrowband THz radiation drives transitions between bound electron states in GaAs neutral donors. Elastic light scattering from a donor bound exciton resonance allows time-resolved measurements of the excited state lifetime and THz-induced AC Stark effect.
Keywords
III-V semiconductors; Stark effect; excitons; gallium arsenide; light scattering; submillimetre wave detectors; surface states; GaAs; GaAs neutral donors; THz-induced AC Stark effect; THz-induced strong field effects; bound electron states; donor bound exciton resonance; elastic light scattering; excited state lifetime; Electron optics; Gallium arsenide; Light scattering; Optical detectors; Optical pulses; Optical scattering; Optical sensors; Pulse measurements; Resonance light scattering; Time measurement; (140.2600) Free Electron Lasers; (300.6470) Spectroscopy, semiconductors; (300.6500) Spectroscopy, time resolved;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571347
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