• DocumentCode
    2233674
  • Title

    4-bit, 15 GS/s ADC in SiGe

  • Author

    Borokhovych, Yevgen ; Gustat, Hans

  • Author_Institution
    Dept. of Syst. Design IHP, BTU Joint Lab. Frankfurt, Frankfurt, Germany
  • fYear
    2008
  • fDate
    16-17 Nov. 2008
  • Firstpage
    268
  • Lastpage
    271
  • Abstract
    This paper presents a high-speed 4 bits full-flash Analog-to-Digital Converter for an UWB radar applications, implemented in 190 GHz SiGe BiCMOS technology. The ADC occupies 1.5 × 1.5 mm2, including bondpads. Converter has 6 GHz input bandwidth and operates up to 15 GSample/s. Power dissipation is 1 W including test buffers and 600 mW for a core part itself.
  • Keywords
    CMOS logic circuits; Ge-Si alloys; analogue-digital conversion; radar; ultra wideband technology; ADC; BiCMOS technology; UWB radar; bandwidth 6 GHz; frequency 190 GHz; full-flash analog-to-digital converter; power 1 W; power 600 mW; Clocks; Frequency; Germanium silicon alloys; Jitter; Power dissipation; Radar applications; Radar signal processing; Radar tracking; Silicon germanium; Ultra wideband radar;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    NORCHIP, 2008.
  • Conference_Location
    Tallinn
  • Print_ISBN
    978-1-4244-2492-4
  • Electronic_ISBN
    978-1-4244-2493-1
  • Type

    conf

  • DOI
    10.1109/NORCHP.2008.4738325
  • Filename
    4738325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2233674