Title :
4-bit, 15 GS/s ADC in SiGe
Author :
Borokhovych, Yevgen ; Gustat, Hans
Author_Institution :
Dept. of Syst. Design IHP, BTU Joint Lab. Frankfurt, Frankfurt, Germany
Abstract :
This paper presents a high-speed 4 bits full-flash Analog-to-Digital Converter for an UWB radar applications, implemented in 190 GHz SiGe BiCMOS technology. The ADC occupies 1.5 × 1.5 mm2, including bondpads. Converter has 6 GHz input bandwidth and operates up to 15 GSample/s. Power dissipation is 1 W including test buffers and 600 mW for a core part itself.
Keywords :
CMOS logic circuits; Ge-Si alloys; analogue-digital conversion; radar; ultra wideband technology; ADC; BiCMOS technology; UWB radar; bandwidth 6 GHz; frequency 190 GHz; full-flash analog-to-digital converter; power 1 W; power 600 mW; Clocks; Frequency; Germanium silicon alloys; Jitter; Power dissipation; Radar applications; Radar signal processing; Radar tracking; Silicon germanium; Ultra wideband radar;
Conference_Titel :
NORCHIP, 2008.
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-2492-4
Electronic_ISBN :
978-1-4244-2493-1
DOI :
10.1109/NORCHP.2008.4738325
