Title :
RF-sputtered BST film microwave tunable device on comparison between MgO(111) and (100) substrate
Author :
Noda, M. ; Yamada, T. ; Torii, T. ; Kamo, T. ; Yamashita, K. ; Funakubo, H. ; Okuyama, M.
Abstract :
We have increased sufficiently figure-of-merit of (Ba,Sr)TiO3(BST) film microwave tunable device by a few times in frequency range of 20 GHz on MgO(111) from that on MgO(100) substrate. Also found the possibility that it is deeply related to the difference in the film strain.
Keywords :
X-ray diffraction; annealing; barium compounds; dielectric losses; dielectric thin films; magnesium compounds; microwave devices; permittivity; sputter deposition; strontium compounds; (BaSr)TiO3; MgO; RF-sputtered BST film microwave tunable device; XRD; dielectric loss; dielectric permittivity; film strain; frequency 20 GHz; post-annealing; Binary search trees; Capacitors; Dielectric losses; Ferroelectric films; Ferroelectric materials; Materials science and technology; Microwave devices; Microwave technology; Substrates; Tunable circuits and devices;
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2009.5307565
