• DocumentCode
    2233722
  • Title

    RF-sputtered BST film microwave tunable device on comparison between MgO(111) and (100) substrate

  • Author

    Noda, M. ; Yamada, T. ; Torii, T. ; Kamo, T. ; Yamashita, K. ; Funakubo, H. ; Okuyama, M.

  • fYear
    2009
  • fDate
    23-27 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have increased sufficiently figure-of-merit of (Ba,Sr)TiO3(BST) film microwave tunable device by a few times in frequency range of 20 GHz on MgO(111) from that on MgO(100) substrate. Also found the possibility that it is deeply related to the difference in the film strain.
  • Keywords
    X-ray diffraction; annealing; barium compounds; dielectric losses; dielectric thin films; magnesium compounds; microwave devices; permittivity; sputter deposition; strontium compounds; (BaSr)TiO3; MgO; RF-sputtered BST film microwave tunable device; XRD; dielectric loss; dielectric permittivity; film strain; frequency 20 GHz; post-annealing; Binary search trees; Capacitors; Dielectric losses; Ferroelectric films; Ferroelectric materials; Materials science and technology; Microwave devices; Microwave technology; Substrates; Tunable circuits and devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
  • Conference_Location
    Xian
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-4970-5
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2009.5307565
  • Filename
    5307565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2233722