Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates

Author

Garrett, Gregory A. ; Shen, Hongen ; Wraback, Michael ; Tyagi, Anurag ; Schmidt, Mathew C. ; Jia, Zhongyuan ; Speck, James S. ; DenBaars, Steven P. ; Nakamura, And Shuji

Author_Institution

U.S. Army Res. Lab., Adelphi, MD

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We present time-resolved photoluminescence on InGaN/GaN multiple-quantum well LEDs grown on nonpolar and semipolar bulk GaN substrates and investigate increasing indium concentrations toward higher power, longer wavelength light emitters.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; LED structures; multiple-quantum well LED; nonpolar bulk GaN substrates; semipolar bulk GaN substrates; time-resolved optical studies; time-resolved photoluminescence; Gallium nitride; Indium; Laser excitation; Light emitting diodes; Optical materials; Optical pulses; Optical sensors; Photoluminescence; Pulse amplifiers; Quantum well devices; (230.3670) Light-emitting diodes; (300.6500) Spectroscopy, time-resolved;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571357