Title :
X-band and Ka-band tunable devices using low-loss BST ferroelectric capacitors
Author :
Choi, Kwang ; Courrèges, Stanis ; Zhao, Zhiyong ; Papapolymerou, John ; Hunt, Andrew
Author_Institution :
nGimat, Atlanta, GA, USA
Abstract :
This paper presents tunable filters and phase shifters using low-loss ferroelectric BST (Barium Strontium Titanate) capacitors. Optimization of the BST varactors has resulted in phase shifters and tunable filters with practically usable performances. Two X-band filters, A and B, exhibit insertion loss of 7 dB - 4.1 dB and 14.9 % tuning, and 7.7 dB - 4.7 dB and 19.5% tuning, respectively, when a bias voltage of 0 V to 30 V is applied. A sharp roll-off with excellent out-of-band rejection was achieved on both filters. A Ka-band bandpass filter has a frequency tuning of 17% at a bias voltage of 30 V and a good insertion loss between 6.5 dB and 2.5 dB, comparable with the ones using MEMS technologies at these frequencies. A 35 GHz phase shifter showed an insertion loss of 7 dB with no bias, which improved to below 4 dB when biased at 30 V. The figure of merit is 55 deg/dB. All circuits present good performances in X-band and Ka-band. The measured results of these microwave tunable ferroelectric devices are presented.
Keywords :
band-pass filters; barium compounds; ferroelectric capacitors; micromechanical devices; microwave phase shifters; strontium compounds; varactors; BST varactors; BaSrTiO3; Ka-band bandpass filter; MEMS technology; X-band tunable device; frequency 35 GHz; low-loss BST ferroelectric capacitors; microwave tunable ferroelectric devices; out-of-band rejection; phase shifters; tunable filters; voltage 30 V; Band pass filters; Binary search trees; Capacitors; Ferroelectric materials; Frequency; Insertion loss; Phase shifters; Tunable circuits and devices; Tuning; Voltage; Ka band; Tunable filters; X band; barium strontium titanate; ferroelectric; phase shifters;
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2009.5307566