DocumentCode
2233769
Title
Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes
Author
Arif, Ronald A. ; Zhao, Hongping ; Ee, Yik-Khoon ; Penn, S. Tafon ; Dierolf, Volkmar ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Spontaneous emission characteristics and power-dependent cathodoluminescence (CL) of staggered InGaN quantum wells (QWs) light emitting diodes were analyzed. The measurements indicated ~4-times improvement in integrated CL intensity and ~50% reduction in non-radiative recombination rate.
Keywords
III-V semiconductors; cathodoluminescence; indium compounds; light emitting diodes; semiconductor quantum wells; InGaN; InGaN quantum wells; cathodoluminescence; light emitting diodes; luminescence efficiency; spontaneous recombination rate; Charge carrier density; Gallium nitride; Light emitting diodes; Luminescence; Piezoelectric polarization; Quantum computing; Radiative recombination; Spontaneous emission; Stimulated emission; Temperature; (230.3670) Light-Emitting Diodes; (230.5590) Quantum-Well Devices;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571358
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