Title :
Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes
Author :
Arif, Ronald A. ; Zhao, Hongping ; Ee, Yik-Khoon ; Penn, S. Tafon ; Dierolf, Volkmar ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
Spontaneous emission characteristics and power-dependent cathodoluminescence (CL) of staggered InGaN quantum wells (QWs) light emitting diodes were analyzed. The measurements indicated ~4-times improvement in integrated CL intensity and ~50% reduction in non-radiative recombination rate.
Keywords :
III-V semiconductors; cathodoluminescence; indium compounds; light emitting diodes; semiconductor quantum wells; InGaN; InGaN quantum wells; cathodoluminescence; light emitting diodes; luminescence efficiency; spontaneous recombination rate; Charge carrier density; Gallium nitride; Light emitting diodes; Luminescence; Piezoelectric polarization; Quantum computing; Radiative recombination; Spontaneous emission; Stimulated emission; Temperature; (230.3670) Light-Emitting Diodes; (230.5590) Quantum-Well Devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
